4H-N Semi Transparent sic Substrate SiC Crystal Ingot Optical Widows Lens
About Silicon Carbide (SiC) CrystalSilicon carbide (SiC […]
About Silicon Carbide (SiC) CrystalSilicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the
important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
Parameter of 4H-N Semi Transparent sic Substrate SiC Crystal Ingot Optical Widows Lens
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K | |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
4inch diameter Silicon Carbide (SiC) Substrate Specification
2inch diameter Silicon Carbide (SiC) Substrate Specification
| Grade | Zero MPD Grade | Production Grade | Research Grade | Dummy Grade |
| Diameter | 100. mm±0.38mm | |||
| Thickness | 350 μm±25μm or 500±25um Or other customized thickness | |||
| Wafer Orientation | On axis : <0001>±0.5° for 4h-semi | |||
| Micropipe Density | ≤0 cm-2 | ≤2 cm-2 | ≤5 cm-2 | ≤30 cm-2 |
| Resistivity 4H-N | 0.015~0.028 Ω•cm | |||
| Resistivity 4H-semi | ≥1E7 Ω·cm | |||
| Resistivity 6H-N | 0.02~0.1 Ω•cm | |||
| Primary Flat | {10-10}±5.0° | |||
| Primary Flat Length | 18.5 mm±2.0 mm or round shape | |||
| Secondary Flat Length | Silicon face up: 90° CW. from Prime flat ±5.0° | |||
| Edge exclusion | 1 mm | |||
| TTV/Bow /Warp | ≤10μm /≤10μm /≤15μm | |||
| Roughness | Polish Ra≤1 nm / CMP Ra≤0.5 nm | |||
| Cracks by high intensity light | None | 1 allowed, ≤2 mm | Cumulative length ≤ 10mm, single length≤2mm | |
| Hex Plates by high intensity light | Cumulative area ≤1% | Cumulative area ≤1% | Cumulative area ≤3% | |
| Polytype Areas by high intensity light | None | Cumulative area ≤2% | Cumulative area ≤5% | |
| Scratches by high intensity light | 3 scratches to 1×wafer diameter cumulative length | 5 scratches to 1×wafer diameter cumulative length | ||
| edge chip | None | 3 allowed, ≤0.5 mm each | 5 allowed, ≤1 mm each | |
| 4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots | 4H Semi-insulating / High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
| 6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
Q: What’s the way of shipping and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express account, it’s great.
Q: How to pay?
(1) T/T, PayPal, West Union, MoneyGram and
Assurance payment on Alibaba and etc..
(2) Bank Fee: West Union≤USD1000.00),
T/T -: over 1000usd ,please by t/t
Q: What’s the deliver time?
(1) For inventory: the delivery time is 5 workdays.
(2) For customized products: the delivery time is 7 to 25 workdays. According to the quantity.
Q: Can I customize the products based on my need?
Yes, we can customize the material, specifications and optical coating for your optical components based on your needs.
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