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4Inch prime Grade 4H-N 1.5mm SIC Silicon Carbide Wafer

4Inch prime Grade 4H-N 1.5mm SIC Silicon Carbide Wafer

Silicon carbide (SiC), also known as carborundum, is a […]

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Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

9760e66cc616e886088c4708ca0eaba 4Inch prime Grade 4H-N 1.5mm SIC Silicon Carbide Wafer
Property4H-SiC, Single Crystal6H-SiC, Single Crystal
Lattice Parametersa=3.076 Å c=10.053 Åa=3.073 Å c=15.117 Å
Stacking SequenceABCBABCACB
Mohs Hardness≈9.2≈9.2
Density3.21 g/cm33.21 g/cm3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Index @750nmno = 2.61
ne = 2.66
no = 2.60
ne = 2.65
Dielectric Constantc~9.66c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K
 
Thermal Conductivity (Semi-insulating)a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K
a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap3.23 eV3.02 eV
Break-Down Electrical Field3-5×106V/cm3-5×106V/cm
Saturation Drift Velocity2.0×105m/s2.0×105m/s
5abe6147ca092a18cd0e74cc0952961 4Inch prime Grade 4H-N 1.5mm SIC Silicon Carbide Wafer
sic parameter

 

H746ef82b5fe342d3b0ab19d5f9268098s 4Inch prime Grade 4H-N 1.5mm SIC Silicon Carbide Wafer
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