POSITON:Xinkehui » Products» 8″ dia200mm GaN-on-Si Epi-wafer for Micro-LED 6inch AlGaN/GaN HEMT-on-HR Si Epi wafer
8″ dia200mm GaN-on-Si Epi-wafer for Micro-LED 6inch AlGaN/GaN HEMT-on-HR Si Epi wafer

8″ dia200mm GaN-on-Si Epi-wafer for Micro-LED 6inch AlGaN/GaN HEMT-on-HR Si Epi wafer

Gallium Nitride is one kind of wide-gap compound semico […]

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redirectFileUrl 8" dia200mm GaN-on-Si Epi-wafer for Micro-LED 6inch AlGaN/GaN HEMT-on-HR Si Epi wafer
GaN Wafer

Gallium Nitride is one kind of wide-gap compound semiconductors. Gallium Nitride (GaN) substrate is

a high-quality single-crystal substrate. It is made with original HVPE method and wafer processing technology, which has been originally developed for 10+years in China. The features are high crystalline, good uniformity, and superior surface quality. GaN substrates are used for many kinds of applications, for white LED and LD(violet, blue and green) Furthermore, development has progressed for power and high frequency electronic device applications.

ItemsValues/Scope
SubstrateSi
Wafer diameter4” / 6” / 8”
Epi-layer thickness4-5 μm
Wafer bow<30 μm, Typical
Surface MorphologyRMS<0.5nm in 5×5 μm²
BarrierAlXGa1-XN, 0<X<1
Cap layerIn-situ SiN or GaN (D-mode); p-GaN (E-mode)
2DEG density>9E12/cm2 (20nm Al0.25GaN)
Electron mobility>1800 cm2/Vs (20nm Al0.25GaN)
GaN Specification 
20220311180956_38992 8" dia200mm GaN-on-Si Epi-wafer for Micro-LED 6inch AlGaN/GaN HEMT-on-HR Si Epi wafer
8” GaN Wafer
ItemsValues/Scope
SubstrateHR_Si / SiC
Wafer diameter4’’/6’’ for SiC, 4”/ 6”/ 8” for HR_Si
Epi-layer thickness2-3 μm
Wafer bow<30 μm, Typical
Surface MorphologyRMS<0.5nm in 5×5 μm²
BarrierAlGaN or AlN or InAlN
Cap layerIn-situ SiN or GaN
Application
20220311181106_75978-1 8" dia200mm GaN-on-Si Epi-wafer for Micro-LED 6inch AlGaN/GaN HEMT-on-HR Si Epi wafer
20220311181116_86438 8" dia200mm GaN-on-Si Epi-wafer for Micro-LED 6inch AlGaN/GaN HEMT-on-HR Si Epi wafer
ItemsGaN-on-SiGaN-on-Sapphire
4”/ 6”/ 8”2”/ 4”/ 6”
Epi-layer Thickness<4 μm<7 μm
Average Dominant/ Peak Wavelength400-420nm, 440-460nm, 510-530nm270-280nm, 440-460nm, 510-530nm
FWHM<20nm for Blue/Near-UV<40nm for Green<15nm for UVC<25nm for Blue<40nm for Green
Wafer Bow<50 μm<180 μm
LED Application
20220311181135_20776 8" dia200mm GaN-on-Si Epi-wafer for Micro-LED 6inch AlGaN/GaN HEMT-on-HR Si Epi wafer
20220311181145_79397 8" dia200mm GaN-on-Si Epi-wafer for Micro-LED 6inch AlGaN/GaN HEMT-on-HR Si Epi wafer

FAQ

Q: What you can supply logistics and cost?
(1) We accept DHL, Fedex, TNT, UPS, EMS, SF and etc.
(2) If you have your own express number, it’s great.
If not, we could assist you to deliver. Freight=USD25.0(the first weight) + USD12.0/kg

Q: What’s the delivery time?
(1) For the standard products such as 2inch 0.33mm wafer.
For inventory: the delivery is 5 workdays after order.
For customized products: the delivery is 2 or 4 workweeks after order.

Q: How to pay?
100%T/T, Paypal, West Union, MoneyGram, Secure payment and Trade Assurance.


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