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High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

PROPERTIES of 4H-SiC Single Crystal Lattice Parameters: […]

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PROPERTIES of 4H-SiC Single Crystal

  • Lattice Parameters: a=3.073Å c=10.053Å
  • Stacking Sequence: ABCB
  • Mohs Hardness: ≈9.2
  • Density: 3.21 g/cm3
  • Therm. Expansion Coefficient: 4-5×10-6/K
  • Refraction Index: no= 2.61 ne= 2.66
  • Dielectric Constant: 9.6
  • Thermal Conductivity: a~4.2 W/cm·K@298K
  • (N-type, 0.02 ohm.cm) c~3.7 W/cm·K@298K
  • Thermal Conductivity: a~4.9 W/cm·K@298K
  • (Semi-insulating) c~3.9 W/cm·K@298K
  • Band-gap: 3.23 eV Band-gap: 3.02 eV
  • Break-Down Electrical Field: 3-5×10 6V/m
  • Saturation Drift Velocity: 2.0×105m/

4 inch Diameter High Purity 4H Silicon Carbide Substrate Specifications

SUBSTRATE PROPERTYProduction GradeResearch GradeDummy Grade
Diameter100.0 mm+0.0/-0.5 mm
Surface Orientation{0001} ±0.2°
Primary Flat Orientation<11-20> ± 5.0 ̊
Secondary Flat Orientation90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up
Primary Flat Length32.5 mm ±2.0 mm
Secondary Flat Length18.0 mm ±2.0 mm
Wafer EdgeChamfer
Micropipe Density≤5 micropipes/ cm2≤10 micropipes/ cm2≤50 micropipes/ cm2
Polytype areas by high-intensity lightNone permitted≤10% area
Resistivity≥1E5 Ω·cm(area 75%)≥1E5 Ω·cm
Thickness350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV≦10μm≦15 μm
Bow(absolute value)≦25 μm≦30 μm
Warp≦45 μm
Surface FinishDouble Side Polish, Si Face CMP(chemical polishing)
Surface RoughnessCMP Si Face Ra≤0.5 nmN/A
Cracks by high-intensity lightNone permitted
Edge chips/indents by diffuse lightingNone permittedQty.2 <1.0 mm width and depthQty.2 <1.0 mm width and depth
Total usable area≥90%≥80%N/A

6 inch High-purity Semi-insulating 4H-SiC Substrates Specifications

PropertyU(Ultra) GradeP(Production)GradeR(Research)GradeD(Dummy)Grade
Diameter150.0 mm±0.25 mm
Surface Orientation{0001} ± 0.2°
Primary Flat Orientation<11-20> ± 5.0 ̊
Secondary flat OrientationN/A
Primary Flat Length47.5 mm ±1.5 mm
Secondary flat LengthNone
Wafer EdgeChamfer
Micropipe Density≤1 /cm2≤5 /cm2≤10 /cm2≤50 /cm2
Polytype area by High-intensity LightNone≤ 10%
Resistivity≥1E7 Ω·cm(area 75%)≥1E7 Ω·cm
Thickness350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV≦10 μm
Bow(Absolute Value)≦40 μm
Warp≦60 μm
Surface FinishC-face: Optical polished, Si-face: CMP
Roughness(10μm×10μm)CMP Si-face Ra<0.5 nmN/A
Crack by High-intensity LightNone
Edge Chips/Indents by Diffuse LightingNoneQty≤2, the length and width of each<1mm
Effective Area≥90%≥80%N/A
1662362982461 High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

 4H-N Type / High Purity SiC wafer/ingots
2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots
4H Semi-insulating/High Purity SiC wafer
2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
 Customzied size for 2-6inch 
20190329205025_94910 High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device

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