High Purity Silicon Carbide Wafer Prime/Dummy/Ultra Grade 4H-Semi SiC Wafers For 5G Device
PROPERTIES of 4H-SiC Single Crystal Lattice Parameters: […]
PROPERTIES of 4H-SiC Single Crystal
- Lattice Parameters: a=3.073Å c=10.053Å
- Stacking Sequence: ABCB
- Mohs Hardness: ≈9.2
- Density: 3.21 g/cm3
- Therm. Expansion Coefficient: 4-5×10-6/K
- Refraction Index: no= 2.61 ne= 2.66
- Dielectric Constant: 9.6
- Thermal Conductivity: a~4.2 W/cm·K@298K
- (N-type, 0.02 ohm.cm) c~3.7 W/cm·K@298K
- Thermal Conductivity: a~4.9 W/cm·K@298K
- (Semi-insulating) c~3.9 W/cm·K@298K
- Band-gap: 3.23 eV Band-gap: 3.02 eV
- Break-Down Electrical Field: 3-5×10 6V/m
- Saturation Drift Velocity: 2.0×105m/
4 inch Diameter High Purity 4H Silicon Carbide Substrate Specifications
| SUBSTRATE PROPERTY | Production Grade | Research Grade | Dummy Grade |
| Diameter | 100.0 mm+0.0/-0.5 mm | ||
| Surface Orientation | {0001} ±0.2° | ||
| Primary Flat Orientation | <11-20> ± 5.0 ̊ | ||
| Secondary Flat Orientation | 90.0 ̊ CW from Primary ± 5.0 ̊, silicon face up | ||
| Primary Flat Length | 32.5 mm ±2.0 mm | ||
| Secondary Flat Length | 18.0 mm ±2.0 mm | ||
| Wafer Edge | Chamfer | ||
| Micropipe Density | ≤5 micropipes/ cm2 | ≤10 micropipes/ cm2 | ≤50 micropipes/ cm2 |
| Polytype areas by high-intensity light | None permitted | ≤10% area | |
| Resistivity | ≥1E5 Ω·cm | (area 75%)≥1E5 Ω·cm | |
| Thickness | 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm | ||
| TTV | ≦10μm | ≦15 μm | |
| Bow(absolute value) | ≦25 μm | ≦30 μm | |
| Warp | ≦45 μm | ||
| Surface Finish | Double Side Polish, Si Face CMP(chemical polishing) | ||
| Surface Roughness | CMP Si Face Ra≤0.5 nm | N/A | |
| Cracks by high-intensity light | None permitted | ||
| Edge chips/indents by diffuse lighting | None permitted | Qty.2 <1.0 mm width and depth | Qty.2 <1.0 mm width and depth |
| Total usable area | ≥90% | ≥80% | N/A |
6 inch High-purity Semi-insulating 4H-SiC Substrates Specifications
| Property | U(Ultra) Grade | P(Production)Grade | R(Research)Grade | D(Dummy)Grade |
| Diameter | 150.0 mm±0.25 mm | |||
| Surface Orientation | {0001} ± 0.2° | |||
| Primary Flat Orientation | <11-20> ± 5.0 ̊ | |||
| Secondary flat Orientation | N/A | |||
| Primary Flat Length | 47.5 mm ±1.5 mm | |||
| Secondary flat Length | None | |||
| Wafer Edge | Chamfer | |||
| Micropipe Density | ≤1 /cm2 | ≤5 /cm2 | ≤10 /cm2 | ≤50 /cm2 |
| Polytype area by High-intensity Light | None | ≤ 10% | ||
| Resistivity | ≥1E7 Ω·cm | (area 75%)≥1E7 Ω·cm | ||
| Thickness | 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm | |||
| TTV | ≦10 μm | |||
| Bow(Absolute Value) | ≦40 μm | |||
| Warp | ≦60 μm | |||
| Surface Finish | C-face: Optical polished, Si-face: CMP | |||
| Roughness(10μm×10μm) | CMP Si-face Ra<0.5 nm | N/A | ||
| Crack by High-intensity Light | None | |||
| Edge Chips/Indents by Diffuse Lighting | None | Qty≤2, the length and width of each<1mm | ||
| Effective Area | ≥90% | ≥80% | N/A |
Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
| 4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots | 4H Semi-insulating/High Purity SiC wafer 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
| 6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
Service
We pride ourselves in having sales engineering staff with over 5 years experiences in the semiconductor industry. They are trained to answer technical questions as well as provide timely quotations for your needs.
we are at your side by any time when you have problem,and resolve it in 10 hours.
Send Inquiry
