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Optical Square 40x3mmt 6H-N Sic Silicon Carbon Chips

Optical Square 40x3mmt 6H-N Sic Silicon Carbon Chips

Silicon carbide (SiC), also known as carborundum, is a […]

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9HX@PIFU44SCN4P-1 Optical Square 40x3mmt 6H-N Sic Silicon Carbon Chips

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

Property4H-SiC, Single Crystal6H-SiC, Single Crystal
Lattice Parametersa=3.076 Å c=10.053 Åa=3.073 Å c=15.117 Å
Stacking SequenceABCBABCACB
Mohs Hardness≈9.2≈9.2
Density3.21 g/cm33.21 g/cm3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Index @750nmno = 2.61ne = 2.66no = 2.60ne = 2.65
Dielectric Constantc~9.66c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)a~4.2 W/cm·K@298Kc~3.7 W/cm·K@298K 
Thermal Conductivity (Semi-insulating)a~4.9 W/cm·K@298Kc~3.9 W/cm·K@298Ka~4.6 W/cm·K@298Kc~3.2 W/cm·K@298K
Band-gap3.23 eV3.02 eV
Break-Down Electrical Field3-5×106V/cm3-5×106V/cm
Saturation Drift Velocity2.0×105m/s2.0×105m/s

Application of SiC in power device industry

Bandgap widtheV1.123.263.41
Breakdown fieldMV/cm0.232.23.3
Electron mobilitycm^2/Vs14009501500
Drift valocity10^7 cm/s12.72.5
Thermal conductivityW/cmK1.53.81.3

Compared with silicon devices, silicon carbide (SiC) power devices can effectively achieve high efficiency, miniaturization and light weight of power electronic systems. The energy loss of SiC power devices is only 50% of Si devices, and the heat generation is only 50% of silicon devices, SiC also has a higher current density. At the same power level, the volume of SiC power modules is significantly smaller than that of silicon power modules. Taking the intelligent power module IPM as an example, using SiC power devices, the module volume can be reduced to 1/3 to 2/3 of silicon power modules.

There are three types of SiC power diodes: Schottky diodes (SBD), PIN diodes and junction barrier controlled Schottky diodes (JBS). Because of the Schottky barrier, SBD has a lower junction barrier height, so SBD has the advantage of low forward voltage. The emergence of SiC SBD has enlarged the application range of SBD from 250V to 1200V. In addition, its characteristics at high temperature are good, the reverse leakage current not increases from room temperature to 175 ° C. In the application field of rectifiers above 3kV, SiC PiN and SiC JBS diodes have received much attention due to their higher breakdown voltage, faster switching speed, smaller size and lighter weight than silicon rectifiers.

SiC power MOSFET devices have ideal gate resistance, high-speed switching performance, low on-resistance, and high stability. It is the preferred device in the field of power devices below 300V. There are reports that a silicon carbide MOSFET with a blocking voltage of 10kV has been successfully developed. Researchers believe that SiC MOSFETs will occupy an advantageous position in the field of 3kV – 5kV.

SiC Insulated Gate Bipolar Transistors (SiC BJT, SiC IGBT) and SiC Thyristor (SiC Thyristor), SiC P-type IGBT devices with a blocking voltage of 12 kV have good forward current capability. Compared with Si bipolar transistors, SiC bipolar transistors have 20-50 times lower switching losses and lower turn-on voltage drop. SiC BJT is mainly divided into epitaxial emitter BJT and ion implantation emitter BJT, the typical current gain is between 10-50.

20190228110002_56110 Optical Square 40x3mmt 6H-N Sic Silicon Carbon Chips

Silicon Carbide SiC crystal substrate wafer carborundum

The specification of 3” Inch

GradeProductionResearch GradeDummy Grade
Diameter50.8 mm±0.38 mm or other size 
Thickness330 μm±25μm
Wafer OrientationOn axis: <0001>±0.5° for 6H-N/4H-N/4H-SI/6H-SI Off axis : 4.0° toward1120 ±0.5° for 4H-N/4H-SI
Micropipe Density≤5 cm-2≤15 cm-2≤50 cm-2
Resistivity4H-N0.015~0.028 Ω·cm
 6H-N0.02~0.1 Ω·cm
 4/6H-SI>1E5 Ω·cm(90%) >1E5 Ω·cm
Primary Flat{10-10}±5.0°
Primary Flat Length22.2 mm±3.2 mm
Secondary Flat Length11.2mm±1.5 mm
Secondary Flat OrientationSilicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion2 mm
TTV/Bow /Warp≤15μm /≤25μm /≤25μm
RoughnessPolish Ra≤1 nm
CMP Ra≤0.5 nm
Cracks by high intensity lightNone1 allowed, ≤ 1mm1 allowed, ≤2 mm
Hex Plates by high intensity lightCumulative area≤1 %Cumulative area≤1 %Cumulative area≤3 %
Polytype Areas by high intensity lightNoneCumulative area≤2 %Cumulative area≤5 %
Scratches by high intensity light3 scratches to 1×wafer diameter cumulative length5 scratches to 1×wafer diameter cumulative length8 scratches to 1×wafer diameter cumulative length
Edge chipNone3 allowed, ≤0.5 mm each5 allowed, ≤1 mm each
Contamination by high intensity lightNone

SIC Silicon Carbide Wafer Quotation

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