POSITON：Xinkehui » Products» Polished 100mm SIC Epitaxial Silicon Carbide Wafer 1mm Thickness For Ingot Growth
Polished 100mm SIC Epitaxial Silicon Carbide Wafer 1mm Thickness For Ingot Growth

Polished 100mm SIC Epitaxial Silicon Carbide Wafer 1mm Thickness For Ingot Growth

Description of Sic Wafer Property 4H-SiC, Single Crysta […]

Send Inquiry
Add To Cart
sic-wafer Polished 100mm SIC Epitaxial Silicon Carbide Wafer 1mm Thickness For Ingot Growth
silicon carbide wafer

Description of Sic Wafer

Property4H-SiC, Single Crystal6H-SiC, Single Crystal
Lattice Parametersa=3.076 Å c=10.053 Åa=3.073 Å c=15.117 Å
Stacking SequenceABCBABCACB
Mohs Hardness≈9.2≈9.2
Density3.21 g/cm33.21 g/cm3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Index @750nmno = 2.61
ne = 2.66		no = 2.60
ne = 2.65
Dielectric Constantc~9.66c~9.66
Thermal Conductivity (N-type, 0.02 ohm.cm)a~4.2 W/cm·K@298K
c~3.7 W/cm·K@298K		 
Thermal Conductivity (Semi-insulating)a~4.9 W/cm·K@298K
c~3.9 W/cm·K@298K		a~4.6 W/cm·K@298K
c~3.2 W/cm·K@298K
Band-gap3.23 eV3.02 eV
Break-Down Electrical Field3-5×106V/cm3-5×106V/cm
Saturation Drift Velocity2.0×105m/s2.0×105m/s

4H-N  4inch diameter Silicon Carbide (SiC) Substrate Specification

5abe6147ca092a18cd0e74cc0952961 Polished 100mm SIC Epitaxial Silicon Carbide Wafer 1mm Thickness For Ingot Growth
d0b4274b47a02a63c7fa80820c8bf80 Polished 100mm SIC Epitaxial Silicon Carbide Wafer 1mm Thickness For Ingot Growth

Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.

SiC Wafer Applications 

  • 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN,
  • diodes, IGBT, MOSFET
  • 2 optoelectronic devices: mainly used in GaN/SiC blue LED substrate material (GaN/SiC) LED
9760e66cc616e886088c4708ca0eaba Polished 100mm SIC Epitaxial Silicon Carbide Wafer 1mm Thickness For Ingot Growth
Hefda486cf4734ebb8964426b9cbfbf71N Polished 100mm SIC Epitaxial Silicon Carbide Wafer 1mm Thickness For Ingot Growth

CATALOG COMMON  SIZE  In OUR INVENTORY LIST   

4H-N Type / High Purity  SiC wafer/ingots2 inch 4H N-Type SiC wafer/ingots
3 inch 4H N-Type SiC wafer
4 inch 4H N-Type SiC wafer/ingots
6 inch 4H N-Type SiC wafer/ingots		4H Semi-insulating /  High Purity SiC wafer2 inch 4H Semi-insulating SiC wafer
3 inch 4H Semi-insulating SiC wafer
4 inch 4H Semi-insulating SiC wafer
6 inch 4H Semi-insulating SiC wafer 
6H N-Type SiC wafer
2 inch 6H N-Type SiC wafer/ingot
 		 Customzied size for 2-6inch  


    (0/10)

    clearall