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2 Inch 3 Inch 4 Inch Undoped Gallium Arsenide Wafer Semi Insulating GaAs Substrate For LED

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Feature	Application field
High electron mobility	Light emitting diodes
High frequency	Laser diodes
High conversion efficiency	Photovoltaic devices
Low power consumption	High Electron Mobility Transistor
Direct band gap	Heterojunction Bipolar Transistor

GaAs Substrate

Growth Method	VGF
Dopant	p-type: Zn	n-type: Si
Wafer Shape	Round (dia: 2″, 3″, 4″, 6″)
Surface Orientation *	(100)±0.5°
* Other Orientations maybe available upon request
Dopant	Si (n-type)	Zn (p-type)
Carrier Concentration (cm-3)	( 0.8-4) × 1018	( 0.5-5) × 1019
Mobility (cm2/V.S.)	( 1-2.5) × 103	50-120
Etch Pitch Density (cm2)	100-5000	3,000-5,000
Wafer Diameter (mm)	50.8±0.3	76.2±0.3	100±0.3
Thickness (µm)	350±25	625±25	625±25
TTV [P/P] (µm)	≤ 4	≤ 4	≤ 4
TTV [P/E] (µm)	≤ 10	≤ 10	≤ 10
WARP (µm)	≤ 10	≤ 10	≤ 10
OF (mm)	17±1	22±1	32.5±1
OF / IF (mm)	7±1	12±1	18±1
Polish*	E/E, P/E, P/P	E/E, P/E, P/P	E/E, P/E, P/P

Specifications of semi-conducting GaAs wafer

Specifications of semi-insulating GaAs wafer

Growth Method	VGF
Dopant	SI Type: Carbon
Wafer Shape	Round (DIA: 2″, 3″, 4″, 6″)
Surface Orientation *	(100)±0.5°
* Other Orientations maybe available upon request
Resistivity (Ω.cm)	≥ 1 × 107	≥ 1 × 108
Mobility (cm2/V.S)	≥ 5,000	≥ 4,000
Etch Pitch Density (cm2)	1,500-5,000	1,500-5,000
Wafer Diameter (mm)	50.8±0.3	76.2±0.3	100±0.3	150±0.3
Thickness (µm)	350±25	625±25	625±25	675±25
TTV [P/P] (µm)	≤ 4	≤ 4	≤ 4	≤ 4
TTV [P/E] (µm)	≤ 10	≤ 10	≤ 10	≤ 10
WARP (µm)	≤ 10	≤ 10	≤ 10	≤ 15
OF (mm)	17±1	22±1	32.5±1	NOTCH
OF / IF (mm)	7±1	12±1	18±1	N/A
Polish*	E/E, P/E, P/P	E/E, P/E, P/P	E/E, P/E, P/P	E/E, P/E, P/P

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